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| PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 FEATURES * NEW MINIATURE M23 PACKAGE: - World's smallest transistor package footprint -- leads are completely underneath package body - Low profile/0.55 mm package height - Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 0.5 * * * 1 0.25 1.0 0.4 2 3 0.25 DESCRIPTION The NE688M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles. 0.6 0.15 0.2 0.15 BOTTOM VIEW 0.55 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz Forward Current Gain at VCE = 1 V, IC = 3 mA Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz A A pF 0.7 UNITS GHz dB dB 3 80 MIN 4 NE688M23 2SC5651 M23 TYP 5 1.9 4 145 0.1 0.1 0.8 2.5 MAX Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE688M23 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 9 6 2 100 TBD 150 -65 to +150 100 120 VCE = 2 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current, IC (mA) 80 60 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 40 20 TYPICAL PERFORMANCE CURVES (TA = 25C) 0 0 0.2 0.4 0.6 0.8 1 Base to Emitter Voltage, VCE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 IB 50 A step DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 VCE = 2 V Collector Current, IC (mA) 80 450 A 350 A 60 DC Current Gain, hFE 100 40 250 A 20 150 A IB = 50 A 0 0 2 4 6 8 10 0.01 0.1 1 10 100 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 8 10 NOISE FIGURE/ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 VCE = 3 V f = 1 GHz 8 Gain Bandwidth Product, fT (GHz) 7 6 5 4 3 2 1 VCE= 3 V f = 2 GHz GA 6 6 4 4 2 NF 2 0 1 10 100 0 1 10 100 0 Collector Current, IC (mA) Collector Current, IC (mA) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 02/10/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE Associated Gain, GA (dB) 8 Noise Figure, NF (dB) |
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